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Bi1−xSbx alloys are classic thermoelectric materials for near-cryogenic applications. Despite more than half a century of study, unraveling the underlying transport physics within this space has been nontrivial due to the complex electronic structure, disorder, and small bandgap within these alloys. Furthermore, as Peltier coolers, Bi1−xSbx alloys operate in a bipolar regime; as such, understanding the impact of minority carriers is critical for further improvements in device performance. This study unites first principles calculations with low-temperature experimental measurements to create a generalized model for transport within semiconducting Bi-Sb alloys. Our exploration reveals the interplay between the complex, degenerate valence band structure with the extremely light conduction bands. By building a hybrid computational/experimental model, an understanding of both the electron and hole relaxation times emerges both as a function of temperature and energy. Special quasi-random supercell calculations reveal that, despite significant atomic disorder, the electronic band structures within the alloy remains largely unaffected and electron–phonon scattering dominates. For charge carriers near the band edges, the relaxation times are thus extremely long, consistent with cyclotronic behavior appearing at low magnetic fields (≪ 1 T). Modeling thermoelectric performance suggests that the valence band edge deformation potential is significantly weaker and highlights the potential for p-type compositions to meet or exceed the current n-type alloys. 

ABSTRACT This paper reports on a demonstration of YAMZ (Yet Another Metadata Zoo) as a mechanism for building community consensus around metadata terms. The demonstration is motivated by the complexity of the metadata standards environment and the need for more user-friendly approaches for researchers to achieve vocabulary consensus. The paper reviews a series of metadata standardization challenges, explores crowdsourcing factors that offer possible solutions, and introduces the YAMZ system. A YAMZ demonstration is presented with members of the Toberer materials science laboratory at the Colorado School of Mines, where there is a need to confirm and maintain a shared understanding for the vocabulary supporting research documentation, data management, and their larger metadata infrastructure. The demonstration involves three key steps: 1) Sampling terms for the demonstration, 2) Engaging graduate student researchers in the demonstration, and 3) Reflecting on the demonstration. The results of these steps, including examples of the dialog provenance among lab members and voting, show the ease with YAMZ can facilitate building metadata vocabulary consensus. The conclusion discusses implications and highlights next steps. 

The full-Heusler VFe 2 Al has emerged as an important thermoelectric material in its thin film and bulk phases. VFe 2 Al is attractive for use as a thermoelectric materials because of it contains only low-cost, non-toxic and earth abundant elements. While VFe 2 Al has often been described as a semimetal, here we show the electronic and thermal properties of VFe 2 Al can be explained by considering VFe 2 Al as a valence precise semiconductor like many other thermoelectric materials but with a very small band gap ( E g = 0.03 ± 0.01 eV). Using a two-band model for electrical transport and point-defect scattering model for thermal transport we analyze the thermoelectric properties of bulk full-Heusler VFe 2 Al. We demonstrate that a semiconductor transport model can explain the compilation of data from a variety of n and p-type VFe 2 Al compositions assuming a small band-gap between 0.02 eV and 0.04 eV. In this small E g semiconductor understanding, the model suggests that nominally undoped VFe 2 Al samples appear metallic because of intrinsic defects of the order of ∼10 20 defects per cm −3 . We rationalize the observed trends in weighted mobilities ( μ w ) with dopant atoms from a molecular orbital understanding of the electronic structure. We use a phonon-point-defect scattering model to understand the dopant-concentration (and, therefore, the carrier-concentration) dependence of thermal conductivity. The electrical and thermal models developed allow us to predict the zT versus carrier concentration curve for this material, which maps well to reported experimental investigations.